Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 21, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3435485
Keywords
light emitting diodes; photoluminescence; p-n junctions; thermal stresses
Categories
Funding
- ARL-Boston University Collaborative Research and Development
Ask authors/readers for more resources
Lifetime measurements on single-chip, packaged 285 nm light-emitting diodes (LEDs) performed under constant current injection at 20 and 75 mA, were compared to the performance of unbiased LEDs baked at the equivalent operating junction temperatures. The thermally stressed devices showed a lesser degradation than those electrically stressed, indicating that elevated temperature alone does not cause degradation. Despite a decay to less than half of the initial power under current injection, time-resolved photoluminescence of the active region exhibits little change, while capacitance-voltage measurements imply that the reduced efficiency and power decay originate from the generation of point defects near the p-side of the p-n junction. (C) 2010 American Institute of Physics. [doi:10.1063/1.3435485]
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available