Journal
APPLIED PHYSICS LETTERS
Volume 97, Issue 3, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3422473
Keywords
amorphous semiconductors; crystallisation; elemental semiconductors; grain size; nucleation; silicon; transmission electron microscopes
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Funding
- Office of Science, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering, of the U.S. Department of Energy [DE-AC52-07NA27344]
- U.S. Department of Energy
- NSERC
- Canada Research Chairs
- NSERC (Canada)
- FQRNT
- MDEIE (Quebec)
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We describe an in situ method for studying the influence of deposited laser energy on microstructural evolution during nanosecond laser driven crystallization of amorphous Si. By monitoring microstructural evolution as a function of deposited energy in a dynamic transmission electron microscope (DTEM), information on grain size and defect concentration can be correlated directly with processing conditions. This work demonstrates that DTEM studies are a promising approach for obtaining fundamental information on nucleation and growth processes that have technological importance for the development of thin film transistors. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3422473]
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