Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 8, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3327334
Keywords
electric resistance measurement; graphene; semiconductor epitaxial layers; silicon compounds; surface resistance; wide band gap semiconductors
Categories
Funding
- [POIG 01.01.02-00-015/09-00]
- [DWM/N179/PICS-FR/2008]
Ask authors/readers for more resources
Single postdielectric resonators operating on their quasi TE(011) modes were used for the measurement of the surface resistance and conductivity of graphene films grown on semi-insulating SiC substrates. With this technique the surface resistance was measured with an uncertainty of +/- 5% and the conductivity was evaluated with an uncertainty equal to the uncertainty in determining the film thickness. The room temperature conductivity of the graphene films proved to be in the range 5x10(6) to 6.4x10(6) S/m.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available