Journal
APPLIED PHYSICS LETTERS
Volume 97, Issue 1, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3459978
Keywords
dielectric materials; polymers; thin film transistors
Categories
Funding
- NSF [DMR-0120967]
- GEMSEC (Genetically Engineered Materials Science and Engineering Center) through the NSF
- AFOSR [FA9550-09-1-0426]
- ONR [N00014-08-1-1227]
- Institute of Advanced Materials and Technology, University of Washington
- Boeing-Johnson Foundation
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Precise control over the threshold voltage of pentacene-based organic thin film transistors was achieved by inserting a genetically engineered quartz-binding polypeptide at the semiconductor-dielectric interface. A 30 V range was accessed with the same peptide by adjusting the pH of the solution for peptide assembly while leaving other device properties unaffected. Mobility of 0.1-0.2 cm(2) V(-1) s(-1) and on/off current ratio of >10(6) could be achieved for all devices regardless of the presence of the neutral peptide or the peptide assembled in acidic or basic conditions. This shift in threshold voltages is explained by the generation of charged species and dipoles due to variation in assembling conditions. Controlling device characteristics such as threshold voltage is essential for integration of transistors into electronic circuits. (c) 2010 American Institute of Physics. [doi: 10.1063/1.3459978]
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