Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 3, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3294308
Keywords
aluminium compounds; electron traps; gallium compounds; hysteresis; lithium compounds; semiconductor heterojunctions; vacancies (crystal)
Categories
Funding
- Major State Basic Research Development Program of China [61363]
- National Science Foundation of China [50772019, 50932002]
- Shandong Natural Science Foundation [Q2006A09]
Ask authors/readers for more resources
LiNbO3 film (LNO)/AlGaN/GaN heterostructure was fabricated and its memory characteristics were studied. The heterostructure exhibited a wide range clockwise hysteresis (0.3-12.1 V) likely due to the electrons trapping and distrapping from the Li vacancies in the LNO film. After 10 years retention, 10% of the window could remain. In addition, a slight decrease for the memory window happened after 10(5) cycles. These results indicated that LNO film combined with AlGaN/GaN would hold promise for next-generation nonvolatile memory devices. Possible operating mechanism for the memory effect in the heterostructure was explained qualitatively by the energy band diagram.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
