Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 6, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3315868
Keywords
aluminium compounds; Fourier transform spectra; gallium arsenide; III-V semiconductors; indium compounds; microstrip antennas; resonant tunnelling diodes; terahertz wave generation; tunnel diode oscillators
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We report on subterahertz oscillations of resonant tunneling diode oscillators with an integrated patch antenna. The device consists of an InGaAs/InAlAs triple-barrier resonant tunneling diode and a patch antenna on an InP substrate. Current-voltage characteristics indicate a peak current density of 280 kA/cm(2), with a peak-valley ratio of about 3 at room temperature. An oscillation frequency of 517 GHz was observed at room temperature through Fourier transformed infrared spectroscopy. The results agree with electromagnetic analysis.
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