Fundamental oscillation of resonant tunneling diodes above 1 THz at room temperature

Fundamental oscillations up to 1.04 THz were achieved in resonant tunneling diodes at room temperature. A graded emitter and thin barriers were introduced in GaInAs/AlAs double-barrier resonant tunneling diodes for reductions of the transit time in the collector depletion region and the resonant tunneling time, respectively. Output powers were 7 mu W at 1.04 THz and around 10 mu W in 0.9-1 THz region. A change in oscillation frequency of about 4% with bias voltage was also obtained. (C) 2010 American Institute of Physics. [doi:10.1063/1.3525834]