Journal
APPLIED PHYSICS LETTERS
Volume 97, Issue 11, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3487782
Keywords
charge exchange; electron density; epitaxial growth; graphene; monolayers; semiconductor doping; semiconductor epitaxial layers; silicon compounds; work function
Categories
Funding
- EPSRC [EP/G041954]
- EU
- Engineering and Physical Sciences Research Council [EP/G041954/1, EP/G035954/1, EP/I500510/1] Funding Source: researchfish
- EPSRC [EP/G035954/1, EP/G041954/1, EP/I500510/1] Funding Source: UKRI
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We analyze doping of graphene grown on SiC in two models which differ by the source of charge transferred to graphene, namely, from SiC surface and from bulk donors. For each of the two models, we find the maximum electron density induced in monolayer and bilayer graphene, which is determined by the difference between the work function for electrons in pristine graphene and donor states on/in SiC, and analyze the responsivity of graphene to the density variation by means of electrostatic gates. (c) 2010 American Institute of Physics. [doi:10.1063/1.3487782]
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