Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 14, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3374331
Keywords
contact resistance; gallium compounds; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; ohmic contacts; plasma deposition; semiconductor growth; two-dimensional electron gas; wide band gap semiconductors
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Funding
- ONR MINE MURI
- AFOSR
- Intel
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Ultralow Ohmic contact resistance and a self-aligned device structure are necessary to reduce the effect of parasitic elements and obtain higher f(t) and f(max) in high electron mobility transistors (HEMTs). N-polar (0001) GaN HEMTs, offer a natural advantage over Ga-polar HEMTs, in terms of contact resistance since the contact is not made through a high band gap material [Al(Ga)N]. In this work, we extend the advantage by making use of polarization induced three-dimensional electron-gas through regrowth of graded InGaN and thin InN cap in the contact regions by plasma (molecular beam epitaxy), to obtain an ultralow Ohmic contact resistance of 27 mu m to a GaN 2DEG.
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