4.6 Article

Effect of contamination on the electronic structure and hole-injection properties of MoO3/organic semiconductor interfaces

Journal

APPLIED PHYSICS LETTERS
Volume 96, Issue 13, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.3374333

Keywords

band structure; charge injection; electron affinity; ionisation; molybdenum compounds; organic semiconductors; organic-inorganic hybrid materials; ultraviolet photoelectron spectra; work function

Funding

  1. National Science Foundation [DMR-0705920]
  2. Princeton MRSEC of the NSF [DMR-0819860]
  3. Office of Science DOE Energy Frontier Research Center for Interface Science: Solar Electric Materials [DE-SC0001084]
  4. Deutsche Forschungsgemeinschaft (DFG)
  5. Direct For Mathematical & Physical Scien
  6. Division Of Materials Research [819860] Funding Source: National Science Foundation

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The electronic structure and hole-injection properties of ambient contaminated molybdenum trioxide (MoO3) surfaces are studied by ultraviolet and inverse photoemission spectroscopy, and current-voltage measurements. Contamination reduces the work function (WF), electron affinity (EA) and ionization energy by about 1 eV with respect to the freshly evaporated film, to values of 5.7 eV, 5.5 eV, and 8.6 eV, respectively. However, the WF and EA remain sufficiently large that the hole-injection properties of MoO3 are not affected by contamination. The results are of particular importance in view of potential applications of transition metal oxides for low-cost manufacturing of devices in low-vacuum or nonvacuum environment.

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