Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 8, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3327809
Keywords
gallium arsenide; III-V semiconductors; light polarisation; photodetectors; photoelectricity; platinum; spin Hall effect; spin polarised transport
Categories
Funding
- MEXT, Japan [19048028]
- NEDO, Japan
- TRF, Japan
- JSPS
- EPSRC [EP/F024045/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/F024045/1] Funding Source: researchfish
Ask authors/readers for more resources
The photoinduced inverse spin-Hall effect was observed in a Pt/GaAs hybrid structure. In the GaAs layer, circularly polarized light generates spin-polarized carriers, inducing a pure spin current into the Pt layer through the interface. This pure spin current is, by the inverse spin-Hall effect in the Pt layer, converted into electric voltage. By changing the direction and ellipticity of the circularly polarized light, the electromotive force varies systematically, consistent with the prediction of the photoinduced inverse spin-Hall effect. The observed phenomenon allows the direct conversion of circular-polarization information into electric voltage; this phenomenon can be used as a spin photodetector.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available