Journal
APPLIED PHYSICS LETTERS
Volume 97, Issue 15, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3502482
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- Swedish Research Council (VR)
- Solid State Lighting and Energy Center at the University of California, Santa Barbara
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Scanning near field optical microscopy (SNOM) was applied to study the carrier localization in single InGaN/GaN quantum well structures grown on nonpolar m-plane GaN substrates. Dual localization potential consisting of hundreds of nanometers- to micrometer-size areas as well as smaller localization centers were identified from the SNOM scans and near field photoluminescence spectral widths. The localization areas were found to align along the [0001] direction, which was attributed to partial strain relaxation at the monolayer steps. (C) 2010 American Institute of Physics. [doi:10.1063/1.3502482]
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