Journal
APPLIED PHYSICS LETTERS
Volume 97, Issue 6, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3479476
Keywords
contact resistance; error analysis; organic field effect transistors; regression analysis; transmission line matrix methods
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Funding
- French state project PRINTRONICS
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A modified transmission-line method (TLM) for organic transistors contact resistance extraction is proposed. It is shown that the issues of conventional TLM reside in the channel resistance scattering due to parameter variations. These difficulties are overcome in the modified TLM, in which the linear regression slope is directly controlled by the contact resistance rather than by the channel resistance as in conventional TLM. Much smaller transistor-to-transistor dispersion of contact resistance results in a more stable and more reliable extraction method. Moreover, an error study by simulation has been carried out, confirming the greater accuracy of the modified TLM. (C) 2010 American Institute of Physics. [doi:10.1063/1.3479476]
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