Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 5, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3299714
Keywords
gallium arsenide; III-V semiconductors; indium compounds; laser feedback; optoelectronic devices; oscillators; quantum dot lasers
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Funding
- Air Force Office of Scientific Research [FA9550-06-1-0411, FA9550-09-1-0490]
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [0903448] Funding Source: National Science Foundation
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The effect of external optical feedback on an InAs/GaAs quantum dot passively mode-locked laser is investigated. The rf linewidth narrows from 8 KHz in the free-running situation to a value as low as 350 Hz under relatively low feedback. The rf linewidth characterization under resonant feedback at a multiple of the laser cavity length validates the prediction of a previous numerical simulation. It is also confirmed that the integrated rms timing jitter varies as the square root of the rf linewidth. The results are promising for the development of compact, monolithic semiconductor mode-locked lasers as low noise optoelectronic oscillators.
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