Sputtering formation of p-type SnO thin-film transistors on glass toward oxide complimentary circuits

Thin film transistors (TFTs) using polycrystalline tin oxides (SnO-SnO2) channels were formed on glass by a conventional sputtering method and subsequent annealing treatments. SnO-channel TFTs showed p-type operation with on/off current ratios of similar to 10(2) and field-effect mobilities of 0.24 cm(2) V-1 s(-1). Incorporation of excess oxygen to SnO channel layers did not generate holes but did electrons, which in turn led to n-type operation. This result is explained by transformation to a local SnO2-like structure and finally to SnO2. We propose a simple method to fabricate complimentary circuits by simultaneous selective formation of p- and n-channel TFTs. (C) 2010 American Institute of Physics. [doi:10.1063/1.3478213]