Journal
APPLIED PHYSICS LETTERS
Volume 97, Issue 11, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3488825
Keywords
-
Categories
Funding
- National Science Foundation (ECCS) [0701421]
- Class of 1961 Professorship Fund
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [0701421] Funding Source: National Science Foundation
Ask authors/readers for more resources
The optical gain characteristics of high Al-content AlGaN quantum wells (QWs) are analyzed for deep UV lasers. The effect of crystal-field split-off hole (CH) and heavy-hole (HH) bands crossover on the gain characteristics of AlGaN QW with AlN barriers is analyzed. Attributing to the strong transition between conduction-CH bands, the TM spontaneous emission recombination rate is enhanced significantly for high Al-content AlGaN QWs. Large TM-polarized material gain is shown as achievable for high Al-content AlGaN QWs, which indicates the feasibility of TM lasing for lasers emitting at similar to 220-230 nm. (C) 2010 American Institute of Physics. [doi:10.1063/1.3488825]
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
