Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 23, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3447926
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- Solid State Lighting and Energy Center (SSLEC) at UCSB
- DARPA VIGIL [FA8718-08-C-0005]
- NSF MRSEC [DMR05-20415]
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The relationship between pyramidal hillocks and dislocations was studied for GaN thin films grown by metalorganic chemical vapor deposition on low-dislocation-density free-standing m-plane GaN substrates. Four-sided pyramidal hillocks were observed on GaN thin films grown on nominally on-axis m-plane GaN substrates. Cathodoluminescence measurements revealed the presence of a dislocation at the apex of each pyramidal hillock. High-resolution atomic force microscopy images showed a pinned step at the apex of each pyramidal hillock and a spiral ramp around the termination of the step, indicating that the pyramidal hillocks arise from spiral growth around screw-component dislocations intersecting the surface of the crystal. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3447926]
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