Journal
APPLIED PHYSICS LETTERS
Volume 97, Issue 23, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3524493
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Funding
- NSFC [50701005, 50831002, 50971025]
- National Basic Research Program of China [2007CB936202]
- Chinese Ministry of Education [309006]
- Fundamental Research Funds for the Central Universities
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We report room temperature ferromagnetism in boron-doped ZnO both experimentally and theoretically. The single phase Zn1-xBxO films deposited under high oxygen pressure by pulsed laser deposition show ferromagnetic behavior at room temperature. The saturation magnetization increases monotonically from 0 to 1.5 emu/cm(3) with the increasing boron component x from 0% to 6.8%. The first-principles calculations demonstrate that the ferromagnetism in the B-doped ZnO originates from the induced magnetic moment of oxygen atoms in the nearest neighbor sites to B-Zn vacancy pairs. The calculated total magnetic moment shows an increasing trend with the boron component which is consistent with experiment. (C) 2010 American Institute of Physics. [doi:10.1063/1.3524493]
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