Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 25, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3456098
Keywords
band structure; gallium arsenide; III-V semiconductors; membranes; nanofabrication; photoluminescence; semiconductor growth; semiconductor nanotubes; semiconductor quantum wells
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Funding
- NSF [0747178, 0749028]
- DARPA YFA [N66001-09-12107]
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [0747178] Funding Source: National Science Foundation
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III-V microtubes and nanotubes are formed by a strain-induced self-rolling process. We report room-temperature photoluminescence (PL) characteristics of such microtubes with embedded GaAs quantum-well structures and wall thickness as thin as 38 nm. Rolled-up tubes show dramatic PL intensity enhancement compared to their planar counterparts. Holey tubes, formed using patterned membranes, display further increase in intensity implying better light extraction efficiency with the air holes. Systematic shift of PL peak position as a function of tube curvature, attributed to strain induced band structure change, is established. (C) 2010 American Institute of Physics. [doi:10.1063/1.3456098]
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