Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 3, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3275711
Keywords
dark conductivity; gallium compounds; III-V semiconductors; indium compounds; infrared detectors; leakage currents; passivation; photodetectors; photodiodes; semiconductor superlattices
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Funding
- AFOSR [FA9550-09-1-0231]
- AFRL [FA9453-07-C-017]
- KRISS-GRL program
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We report on SU-8 passivation for performance improvement of type-II InAs/GaSb strained layer superlattice detectors (lambda(cut-off)similar to 4.6 mu m). Optical and electrical behavior of SU-8 passivated and unpassivated devices was compared. The dark current density was improved by four orders of magnitude for passivated single diodes at 77 K. The zero bias responsivity and detectivity at 77 K was equal to 0.9 A/W and 3.5x10(12) Jones for SU-8 passivated single pixel diodes. FPA size diodes (24x24 mu m(2)) were also fabricated and they showed responsivity and detectivity of 1.3 A/W and 3.5x10(12) Jones, respectively at 77 K.
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