Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 6, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3309713
Keywords
electrical resistivity; epitaxial layers; Hall effect; internal stresses; lanthanum compounds
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Funding
- Army Research Office [W911-NF-09-1-0398]
- NSF [DMR 05-20415]
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Electrical resistivity and magnetotransport are explored for thin (3-30 nm), epitaxial LaNiO3 films. Films were grown on three different substrates to obtain LaNiO3 films that are coherently strained, with different signs and magnitude of film strain. It is shown that d-band transport is inhibited as the layers progress from compression to tension. The Hall coefficient is holelike. Increasing tensile strain causes the film resistivity to increase, causing strong localization to appear below a critical thickness.
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