Journal
APPLIED PHYSICS LETTERS
Volume 97, Issue 2, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3464292
Keywords
organic compounds; photodiodes
Categories
Funding
- Korean National Research Foundation (NRF) [NRF-2009-352-D00142]
- National Science Foundation [DMR-0120967]
- Air Force Office of Scientific Research (AFOSR) [FA9550-09-1-0426]
- World Class University (WCU) through the NRF of Korea under the Ministry of Education, Science and Technology [R31-10035]
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Reversible switching characteristics of organic nonvolatile memory transistors (ONVMTs) using chemically synthesized graphene oxide (GO) nanosheets as a charge-trapping layer are reported. The transfer curves of GO based ONVMTs showed large gate bias dependent hysteresis with threshold voltage shifts over 20 V. After writing and erasing, stored data were well maintained showing more than two orders of ON/OFF ratio (I-ON/I-OFF=similar to 10(2)) for 10(4) s. These results suggest that GO nanosheets are one potential candidate as the charge-trapping layer in ONVMTs. (C) 2010 American Institute of Physics. [doi:10.1063/1.3464292].
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