Magnetoresistance in magnetic tunnel junctions grown on flexible organic substrates

We report on the fabrication and spin dependent tunneling studies of magnetic tunnel junctions (MTJs) grown on flexible organic substrates. We observe comparable tunneling magnetoresistance (TMR) effects in standard Co/Al(2)O(3)/Co MTJs grown on either buffered polyester based organic substrates or silicon wafers. Moreover we show that after twisting and bending the MTJs on flexible substrates the TMR magnitude is maintained which indicates that spin dependent tunneling properties are preserved. This demonstrates that MTJs based spintronics devices are compatible with embodied flexible organic electronics.