InGaN/GaN multiple quantum well concentrator solar cells

We present the growth, fabrication, and photovoltaic characteristics of In(x) Ga(1-x)N/GaN(x similar to 0.35) multiple quantum well solar cells for concentrator applications. The open circuit voltage, short circuit current density, and solar-energy-to-electricity conversion efficiency were found to increase under concentrated sunlight. The overall efficiency increases from 2.95% to 3.03% when solar concentration increases from 1 to 30 suns and could be enhanced by further improving the material quality. (C) 2010 American Institute of Physics. [doi:10.1063/1.3481424]