Related references
Note: Only part of the references are listed.First-principles study of the electronic properties of Ge dangling bonds at (100)Si1-xGex/SiO2 interfaces
M. Houssa et al.
APPLIED PHYSICS LETTERS (2009)
Physics of Silicene Stripes
A. Kara et al.
JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM (2009)
Electronic structure of two-dimensional crystals from ab initio theory
S. Lebegue et al.
PHYSICAL REVIEW B (2009)
Two- and One-Dimensional Honeycomb Structures of Silicon and Germanium
S. Cahangirov et al.
PHYSICAL REVIEW LETTERS (2009)
The electronic properties of graphene
A. H. Castro Neto et al.
REVIEWS OF MODERN PHYSICS (2009)
First-principles study of the structural and electronic properties of (100)Ge/Ge(M)O2 interfaces (M=Al, La, or Hf)
M. Houssa et al.
APPLIED PHYSICS LETTERS (2008)
Electronic properties of (100)Ge/Ge(Hf)O2 interfaces:: A first-principles study
M. Houssa et al.
SURFACE SCIENCE (2008)
Growth of Si nanostructures on Ag(001)
C. Leandri et al.
SURFACE SCIENCE (2007)
Electronic properties of single-walled silicon nanotubes compared to carbon nanotubes
XB Yang et al.
PHYSICAL REVIEW B (2005)
The SIESTA method for ab initio order-N materials simulation
JM Soler et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2002)
Ab initio calculations for a hypothetical material:: Silicon nanotubes
SB Fagan et al.
PHYSICAL REVIEW B (2000)