Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 8, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3332588
Keywords
ab initio calculations; density functional theory; electronic density of states; elemental semiconductors; Fermi level; germanium; internal stresses; narrow band gap semiconductors; surface states
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The electronic properties of two-dimensional hexagonal germanium, so called germanene, are investigated using first-principles simulations. Consistent with previous reports, the surface is predicted to have a poor metallic behavior, i.e., being metallic with a low density of states at the Fermi level. It is found that biaxial compressively strained germanene is a gapless semiconductor with linear energy dispersions near the K points-like graphene. The calculated Fermi velocity of germanene is almost independent of the strain and is about 1.7x10(6) m/s, quite comparable to the value in graphene.
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