Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 22, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3428777
Keywords
iron alloys; iron compounds; platinum alloys; random-access storage; rapid thermal annealing; silicon compounds; titanium compounds; X-ray diffraction; X-ray photoelectron spectra
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Funding
- National Science Council of the Republic of China [NSC 96-2221-E-009-202-MY3, NSC 98-3114-E-009-007, NSC 98-3114-M-110-001, NSC 97-2112-M-110-009-MY3]
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In this paper, the influence of a 600 degrees C rapid thermal annealing for 60 s on the improvements of resistance switching behaviors in a TiN/SiO2/FeOx/FePt structure is reported. It is found that besides the distinct reduction in memory switching parameters in forming voltage, set/reset voltages, and their dispersions, the resistance ratio of high-resistance state to low-resistance state is also enlarged after annealing. The effects of annealing on improving the resistance switching properties are discussed by x-ray diffraction and x-ray photon-emission spectra depth profile results. Additionally, good retention characteristics are exhibited in the annealed TiN/SiO2/FeOx/FePt resistance switching memory. (C) 2010 American Institute of Physics. [doi:10.1063/1.3428777]
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