Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 20, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3389493
Keywords
organic compounds; scanning probe microscopy; thin film transistors
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Funding
- SRNL LDRD
- U.S. Department of Energy [DE-AC09-08SR22470]
- U.S. Government
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We report scanning Kelvin probe microscopy (SKPM) of single crystal difluoro bis(triethylsilylethynyl) anthradithiophene (diF-TESADT) organic transistors. SKPM provides a direct measurement of the intrinsic charge transport in the crystals independent of contact effects and reveals that degradation of device performance occurs over a time period of minutes as the diF-TESADT crystal becomes charged. (C) 2010 American Institute of Physics. [doi:10.1063/1.3389493]
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