Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 7, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3315869
Keywords
aluminium compounds; gallium arsenide; III-V semiconductors; indium compounds; microcavity lasers; quantum dot lasers; whispering gallery modes
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Funding
- European Commission [29283]
- Nanoscience aux limites de la Nanoelectronique
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We report whispering gallery mode (WGM) lasing from high quality GaAs/AlAs micropillars with embedded InAs quantum dots, under continuous optical pumping. For temperatures ranging from 5 to 100 K, simultaneous lasing from TE1,1,m WGMs is observed for pillar diameters in the 3-4 mu m range. Spectral linewidths and energy shifts of the lasing modes are analyzed as a function of the pump power. Thanks to the efficient heat sinking provided by the micropillar geometry, a clear line narrowing is observed above threshold. Moreover, the lasing mode energy remains stable for pump power as large as six times the lasing threshold.
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