Journal
APPLIED PHYSICS LETTERS
Volume 97, Issue 12, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3491429
Keywords
electrical conductivity; hole mobility; organic field effect transistors; organic semiconductors; photoelectron spectra; semiconductor doping; semiconductor heterojunctions; semiconductor thin films; thin film transistors
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Funding
- National Science Foundation [DMR-1005892]
- Princeton MRSEC of the National Science Foundation [DMR-0819860]
- Solvay Corporation
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We demonstrate that holes from a p-doped N,N-'-diphenyl-N,N-'-bis(1-naphthyl)-1,1(')-biphenyl-4,4(')-diamine (alpha-NPD) layer transfer to an adjacent pentacene film. The spatial separation of carriers from dopants, or remote doping, is demonstrated with a combination of photoemission spectroscopy and current-voltage measurements for a p-doped alpha-NPD/pentacene heterojunction. Increased conductivity of the pentacene film is observed in both nongated temperature-dependent conductivity and gated thin-film transistor measurements. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3491429]
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