Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 21, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3435466
Keywords
-
Categories
Funding
- Harvard NSEC under NSF [PHY-0117795]
- AFOSR [FA9550-08-1-0203]
Ask authors/readers for more resources
We demonstrate controlled local phase switching of a VO2 film using a biased conducting atomic force microscope tip. After application of an initial, higher training voltage, the resistance transition is hysteretic with IV loops converging upon repeated voltage sweep. The threshold V-set to initiate the insulator-to-metal transition is on order similar to 5 V at room temperature, and increases at low temperature. We image large variations in V-set from grain to grain. Our imaging technique opens up the possibility for an understanding of the microscopic mechanism of phase transition in VO2 as well as its potential relevance to solid state devices. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3435466]
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available