Journal
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume 43, Issue 11A, Pages 7731-7732Publisher
INST PURE APPLIED PHYSICS
DOI: 10.1143/JJAP.43.7731
Keywords
field-effect transistor; conjugated polymer; electron mobility; injection barrier; organic semiconductor
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We fabricated field-effect transistors (FETs) using a highly soluble fluorene-based polymer as an active layer utilizing a low-work-function metal, calcium as a source-drain electrode material. The n-type characteristic of polymer FETs was successfully realized by lowering the electron injection barrier, although polymer FETs with gold source-drain electrodes did not exhibit n-type or p-type characteristic. The well-defined n-type FET provides a useful means of measuring the electron transport property of new organic semiconductors.
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