Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 10, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3357436
Keywords
-
Categories
Funding
- Ministry of Education, Culture, Sports, Science, and Technology (MEXT) [18686050]
- Kato Science Foundation
- Nippon Sheet Glass Foundation for Materials Science and Engineering
- Iketani Science and Technology Foundation
- Grants-in-Aid for Scientific Research [18686050] Funding Source: KAKEN
Ask authors/readers for more resources
We demonstrate efficient spin injection into GaAs across an Fe3O4 electrode. Spin polarization of electrons injected into a GaAs quantum well becomes significantly large below 120 K, reaching a value of 33% at 10 K. The large spin polarization is likely due to spin filtering effect across the insulating ferrimagnetic Fe3O4 layer at the interface. The results indicate that spin filtering effect across Fe3O4 is a very promising means to enhance the spin injection efficiency into semiconductors. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3357436]
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available