Chemical and electrical characterization of Gd2O3/GaAs interface improved by sulfur passivation

We report the formation of a gate dielectric film on the sulfur passivated GaAs(001). The Gd2O3 films were deposited on the n-GaAs substrates using the electron-beam evaporation. The sulfur passivated GaAs metal-oxide-semiconductor diode exhibited the improved electrical properties compared to a similar GaAs diode that was cleaned with HCl including an enhanced conduction-band barrier and a reduced-leakage current. We investigated the relation between the interfacial bonds and the electrical properties by a systematic characterization using the photoemission spectroscopy. Sulfidation was shown to preserve a stable Gd2O3/GaAs interface and to prevent an interfacial GaAs oxide formation. The stable interface and the passivated surface were caused by the bonding transition from As-S to Ga-S. The As-oxide was dissociated to form the interfacial Ga2O3 and to volatilize the elemental As in the Gd2O3 deposition, conducted without sulfidation. The interfacial oxides and excess As degraded the electrical properties and resulted in the decrease of the conduction-band offset. It was found that the Gd2O3 film was composed of two oxidation states: the amorphous Gd-O and the crystalline Gd2O3. The bonding transition with a substrate heating implies that the Gd2O3 film on the GaAs surface completely crystallizes above 400degreesC. Electrical properties were understood in relation to the band alignment and were estimated from the valence band and the core-level spectra analysis. The sulfidation introduced a shift of the Fermi level toward the conduction-band minimum on the GaAs surface and increased the conduction-band offset at the Gd2O3/GaAs interface, followed by a saturated accumulation capacitance with a low-leakage current. (C) 2004 American Institute of Physics.