Measurement of the thermal conductance of the graphene/SiO2 interface

We have examined the interfacial thermal conductance G(K) of single and multilayer graphene samples prepared on fused SiO2 substrates by mechanical exfoliation of graphite. By using an ultrafast optical pump pulse and monitoring the transient reflectivity on the picosecond time scale, we obtained an average value of G(K) of G(K) = 5000 W/cm(2) K for the graphene/SiO2 interface at room temperature. We observed significant variation in G(K) between individual samples, but found no systematic dependence on the thickness of the graphene layers. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3511537]