Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 9, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3337094
Keywords
ferromagnetic materials; semiconductor quantum dots; thermoelectricity; tunnelling magnetoresistance
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Funding
- National Natural Science Foundation [10674058, 60876065]
- State Key Program for Basic Research of China [2006CB921803, 2009CB929504]
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We study the associated effects of polarized light and temperature bias on the charge and spin transport through a semiconductor quantum dot connected to two ferromagnetic electrodes. A spin-dependent thermoelectric current is generated in such a system, and a totally pure spin current can be obtained without an accompanying charge current. Furthermore, the sign reversal of tunnel magnetoresistance is found, which is induced by temperature difference and Rabi frequency.
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