Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 14, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3374447
Keywords
aluminium compounds; atomic layer deposition; electron mobility; gallium arsenide; III-V semiconductors; indium compounds; MISFET; passivation; surface roughness
Categories
Funding
- NEDO
Ask authors/readers for more resources
We have developed III-V-semiconductor-on-insulator (III-V-OI) structures on Si wafers with excellent bottom interfaces between In0.53Ga0.47As-OI channel layers and atomic-layer-deposited Al2O3 (ALD-Al2O3) buried oxides (BOXs). A surface activated bonding process and the sulfur passivation pretreatment have realized the excellent In0.53Ga0.47As-OI/ALD-Al2O3 BOX bottom interface properties. As a result, the III-V-OI n-channel metal-insulator-semiconductor field-effect transistors under the back-gate configuration showed the peak mobility of 1800 cm(2)/V s and the higher electron mobility than the Si universal one even in the high effective electric field range because of the reduction in the surface roughness and fixed charges.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available