Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 22, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3442485
Keywords
aluminium compounds; entropy; ferromagnetic materials; ferromagnetic-paramagnetic transitions; iron compounds; manganese compounds; Maxwell equations; paramagnetic materials; solid-state phase transformations
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Funding
- Semiconductor Research Corporation
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It is known that Ta, a popular diffusion barrier material, can itself penetrate into low-k dielectrics under bias-temperature stress. In this work, we derived a model which directly correlates the diffusivity of Ta ions to the rate of flatband voltage shift (FBS) of the Ta/methyl silsesquixane (MSQ)/Si capacitors. From our experimentally measured constant FBS rate, the Ta diffusivity and activation energy were determined. It appears that an increase in the porosity of MSQ film enhances the Ta diffusivity but does not affect the associated activation energy. This suggests the Ta ion diffusion is mainly through interconnected pore surfaces. (C) 2010 American Institute of Physics. [doi:10.1063/1.3442485]
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