Journal
SOLID STATE COMMUNICATIONS
Volume 132, Issue 8, Pages 503-506Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2004.09.024
Keywords
silicon-based PCs; deep reactive ion etching; photonic band gap; transmission and reflection spectra
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We report the fabrication and characterization of two-dimensional silicon-based photonic crystal structures realized by deep reactive ion etching. Photonic crystals with square and triangular lattices with very high aspect ratios up to 33 have been achieved. Photonic bandgap behaviors are identified by the transmission and reflection spectra measured by using a Fourier transform infrared spectrometer. The experimental results are in good agreement with the calculated band structures. (C) 2004 Elsevier Ltd. All rights reserved.
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