Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 3, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3293298
Keywords
carrier lifetime; cathodoluminescence; excitons; gallium compounds; III-V semiconductors; indium compounds; photoluminescence; radiative lifetimes; semiconductor quantum wells; time resolved spectra; visible spectra; wide band gap semiconductors
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Funding
- Defense Advanced Research Projects Agency (DARPA)
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InGaN quantum wells, with luminescence in the yellow region of the visible spectrum, have been studied using conventional and time-resolved cathodoluminescence. We observe the absence of strong localization effects and a relatively high internal quantum efficiency of similar to 12%, which are unexpected for InGaN in this-long wavelength emission range. We have also observed a steady decrease of the peak emission energy, and a continuous increase in the radiative recombination lifetime with temperature up to 100 K. These two features are manifestations of recombination due to nonlocalized excitons. Nonradiative recombination centers, with activation energy of similar to 6 meV, appear to constitute the main mechanism limiting the internal quantum efficiency of these films.
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