Related references
Note: Only part of the references are listed.Origin of electric dipoles formed at high-k/SiO2 interface
Koji Kita et al.
APPLIED PHYSICS LETTERS (2009)
Effective work function modulation of TaN metal gate on HfO2 after postmetallization annealing
Youhei Sugimoto et al.
APPLIED PHYSICS LETTERS (2007)
Investigation of molybdenum nitride gate on SiO2 and HfO2 for MOSFET application
BY Tsui et al.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2006)
Interfacial properties of Hf-silicate/Si and Hf-silicate/Al2O3/Si deposited by atomic layer chemical vapor deposition
J Kim et al.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2005)
Engineering chemically abrupt high-k metal oxide/silicon interfaces using an oxygen-gettering metal overlayer
H Kim et al.
JOURNAL OF APPLIED PHYSICS (2004)
Variable work function in MOS capacitors utilizing nitrogen-controlled TiNx gate electrodes
J Westlinder et al.
MICROELECTRONIC ENGINEERING (2004)
Fermi pinning-induced thermal instability of metal-gate work functions
HY Yu et al.
IEEE ELECTRON DEVICE LETTERS (2004)
On the thermal stability of atomic layer deposited TiN as gate electrode in MOS devices
J Westlinder et al.
IEEE ELECTRON DEVICE LETTERS (2003)
Physical and electrical characteristics of HfN gate electrode for advanced MOS devices
HY Yu et al.
IEEE ELECTRON DEVICE LETTERS (2003)