Journal
APPLIED PHYSICS LETTERS
Volume 97, Issue 10, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3488817
Keywords
-
Categories
Funding
- Korea government (MEST) [20090079630]
Ask authors/readers for more resources
We improved the device performance of N,N'-ditridecyl-3,4,9,10-perylenetetracarboxylic diimide (PTCDI-C13) n-type field-effect transistors, increasing electron-mobility from 0.003 to 0.101 cm(2)/V s, by applying a coating of poly(3,4-ethylenedioxythiophene):poly(4-styrene sulfonate) (PEDOT:PSS) to gold source/drain (S/D) electrodes, thereby reducing contact resistance in the devices. Crystallinity and electronic structure studies suggested that the improved device performance resulted from higher crystallinity of PTCDI-C13 on the PEDOT:PSS-coated S/D electrodes at the interface between the electrode and the channel. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3488817]
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available