4.6 Article

Crystal symmetry breaking in few-quintuple Bi2Te3 films: Applications in nanometrology of topological insulators

Journal

APPLIED PHYSICS LETTERS
Volume 96, Issue 15, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.3396190

Keywords

bismuth alloys; crystal symmetry; metallic thin films; phonons; Raman spectra; tellurium alloys

Funding

  1. DARPA-SRC through the FCRP Center on Functional Engineered Nano Architectonics (FENA) and Interconnect Focus Center (IFC)
  2. U.S. AFOSR [A9550-08-1-0100]

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The authors report results of micro-Raman spectroscopy investigation of mechanically exfoliated single-crystal bismuth telluride films with thickness ranging from a few-nanometers to bulk limit. It is found that the optical phonon mode A(1u), which is not-Raman active in bulk Bi2Te3 crystals, appears in the atomically-thin films due to crystal-symmetry breaking. The intensity ratios of the out-of-plane A(1u) and A(1g) modes to the in-plane E-g mode grow with decreasing film thickness. The evolution of Raman signatures with the film thickness can be used for identification of Bi2Te3 crystals with the thickness of few-quintuple layers important for topological insulator and thermoelectric applications.

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