Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 5, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3298358
Keywords
ferromagnetic materials; gallium arsenide; III-V semiconductors; magnetic semiconductors; magnetic tunnelling; manganese compounds; semiconductor quantum wells; spin polarised transport
Categories
Funding
- Scientific Research [18106007, 19048018, 20686002]
- MEXT
- PRESTO
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We investigate the spin-dependent tunneling properties in a three-terminal III-V-based ferromagnetic-semiconductor heterostructure with a 2.5 nm thick GaMnAs quantum well (QW) and double barriers. We successfully control the quantum levels and modulate the spin-dependent current with varying the voltage of the electrode connected to the GaMnAs QW. Our results will open up a new possibility for realizing three-terminal spin resonant-tunneling devices.
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