Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 26, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3455104
Keywords
aluminium compounds; etching; gallium arsenide; III-V semiconductors; micromachining; semiconductor epitaxial layers
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Funding
- European Commission (EC)
- Austrian Science Fund [L426]
- European Research Council (ERC)
- Austrian Science Fund (FWF) [Y 414] Funding Source: researchfish
- Austrian Science Fund (FWF) [L426] Funding Source: Austrian Science Fund (FWF)
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We outline a facile fabrication technique for the realization of free-standing AlxGa1-xAs heterostructures of arbitrary aluminum content. Utilizing xenon difluoride (XeF2) we rapidly and selectively remove a sacrificial germanium (Ge) underlayer in a room temperature gas-phase etching procedure. We demonstrate two possibilities for exploiting this unique process: (1) bulk micromachining of a suspended high-frequency low-dissipation micro-optomechanical resonator consisting of an epitaxial GaAs/AlAs multilayer grown on a Ge substrate and (2) epitaxial lift-off of a GaAs film via removal of an embedded Ge sacrificial layer, resulting in lateral etch rates up to 3 mm/h and a conservative selectivity of similar to 10(6). (C) 2010 American Institute of Physics. [doi: 10.1063/1.3455104]
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