Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 15, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3402760
Keywords
field effect transistors; nanowires
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Funding
- Swedish Research Council (VR)
- Swedish Foundation for Strategic Research (SSF)
- European Community (EU) [015783 NODE]
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We present temperature dependent electrical measurements on InSb and InAs nanowire field-effect transistors (FETs). The FETs are fabricated from InAs/InSb heterostructure nanowires, where one complete transistor is defined within each of the two segments. Both the InSb and the InAs FETs are n-type with good current saturation and low voltage operation. The off-current for the InSb FET shows a strong temperature dependence, which we attribute to a barrier lowering due to an increased band-to-band tunneling in the drain part of the channel.
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