Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 12, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3372635
Keywords
bending; dark conductivity; III-V semiconductors; indium compounds; membranes; nanostructured materials; photoconductivity; photodetectors; polymers
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Funding
- U.S. AFOSR MURI [FA9550-08-1-0337]
- U.S. ARO [W911NF-09-1-0505]
- U.S. AFRL [FA 8650-07-2-5061]
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Large-area (3x3 mm(2)) flexible photodetectors were realized, based on crystalline InP semiconductor nanomembranes transferred to flexible polyethylene terephthalate substrates. Very low dark current (a few microamperes) and high responsivity (0.12 A/W) were demonstrated for flexible InP p-i-n photodetectors. Bending characteristics were also investigated for this type of flexible crystalline semiconductor photodetector, and it was found that, whereas the dark current was independent of bending radii, the photocurrent degraded, depending on the bending radii.
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