Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 1, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3281027
Keywords
aluminium compounds; atomic layer deposition; capacitance; energy gap; gallium arsenide; indium compounds; MIS capacitors; passivation; platinum; tunnelling
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Funding
- GRC Non-classical CMOS Research Center [Task 1437.003]
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Charge-trapping defects in Pt/Al2O3/In0.53Ga0.47As metal-oxide-semiconductor capacitors and their passivation by hydrogen are investigated in samples with abrupt oxide/III-V interfaces. Tunneling of electrons into defect states (border traps) in the atomic layer deposited Al2O3 near the oxide/semiconductor interface is found to control the frequency dispersion of the capacitance in accumulation. Hydrogen anneals effectively passivate border traps in the oxide, in addition to some of the midgap states that control carrier generation in the channel. This is evident in the reduced frequency dispersion in accumulation, reduced capacitance-voltage stretch-out through depletion, and suppression of the inversion carrier response in capacitance-voltage measurements.
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