Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 12, Pages -Publisher
AIP Publishing
DOI: 10.1063/1.3367748
Keywords
electron spin polarisation; elemental semiconductors; magnetic tunnelling; magnetoelectronics; magnetoresistance; phosphorus; silicon; spin dynamics
Categories
Ask authors/readers for more resources
The Hanle-type spin precession method was carried out in association with nonlocal (NL) magnetoresistance measurement using a highly doped (5x10(19) cm(-3)) silicon (Si) channel. The spin diffusion length obtained by the Hanle-method is in good agreement with that of the gap dependence of NL signals. We have evaluated the interface and bulk channel effects separately, and it was demonstrated that the major factor of temperature dependence of NL signals originates from the spin polarization reduction at interface between the tunnel barrier and silicon.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available