Journal
APPLIED PHYSICS LETTERS
Volume 97, Issue 15, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3500824
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Funding
- Ministry of Knowledge Economy (MKE) of Korean Government
- Korea Institute for Advancement in Technology (KIAT) [2008-H08-025]
- Ministry of Public Safety & Security (MPSS), Republic of Korea [2008-H08-025] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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In this study, electrical charging phenomena in an organic memory structure using Au nanoparticles (NPs) conjugated with a specific binding mechanism were demonstrated. Monolayer of streptavidin-passivated Au NPs was incorporated on biotin-coated SiO(2) in structure of metal-pentacene-insulator-silicon (MPIS) device. Clockwise and counter-clockwise capacitance-voltage (C-V) hysteresis loops were measured depending on the oxide thickness. For 30 nm, a clockwise C-V hysteresis having memory window of 0.68 V was obtained under (+/-)12 V sweep range, while a counter-clockwise C-V hysteresis having memory window of 6.47 V was obtained under (+/-)7 V sweep range for 10 nm thick oxide. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3500824]
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